扫一扫
关注中图网
官方微博
本类五星书更多>
-
>
湖南省志(1978-2002)?铁路志
-
>
公路车宝典(ZINN的公路车维修与保养秘籍)
-
>
晶体管电路设计(下)
-
>
无头案:雍正暴亡之谜
-
>
基于个性化设计策略的智能交通系统关键技术
-
>
花样百出:贵州少数民族图案填色
-
>
识木:全球220种木材图鉴
基于氧化镓的超宽禁带半导体薄膜生长与表征 版权信息
- ISBN：9787568059039
- 条形码：9787568059039 ; 978-7-5680-5903-9
- 装帧：平装-胶订
- 册数：暂无
- 重量：暂无
- 所属分类：>>
基于氧化镓的超宽禁带半导体薄膜生长与表征 本书特色
本书主要研究了新一带超宽禁带半导体材料-氧化镓的基本性质；全书从氧化镓的基本性质与国内外研究现状入手，详细论述了氧化镓生长质量的影响因素；论述了利用掺杂来氧化镓电导率调制的方法与机制；论述了分别利用氧化铟和氧化铝和氧化镓来形成合金从而调节其禁带宽度的方法与机制。
基于氧化镓的超宽禁带半导体薄膜生长与表征 内容简介
本书主要研究了新一带超宽带半导体材料-氧化镓的基本性质；全书从氧化镓的基本性质与靠前外研究现状入手，详细论述了氧化镓生长质量的影响因素；论述了利用掺杂来氧化镓电导率调制的方法与机制；论述了分别利用氧化铟和氧化铝和氧化镓来形成合金从而调节其带宽度的方法与机制。
基于氧化镓的超宽禁带半导体薄膜生长与表征 目录
1 Introduction
1.1 Background
1.2 Review of studies on Ga2O3, (Ga1-xInx)2O3 and (AlxGa1-x)2O3 films
1.2.1 Ga2O3
1.2.2 Si doped Ga2O3
1.2.3 (Ga1-xInx)2O3
1.2.4 (AlxGa1-x)2O3
1.3 Purpose and Outline
2 Film growth and characterization methods
2.1 Film deposition techniques
2.2 Pulsed laser deposition
2.2.1 Basic of pulsed laser deposition
2.2.2 The deposition process
2.2.3 The pulsed laser deposition equipment used in this research
2.2.4 The film growth procedures
2.3 Characterization methods
3 Growth and characterization of Ga2O3 films
3.1 Introduction
3.2 Oxygen pressure influence
3.2.1 Growth rate
3.2.2 Crystal structure
3.2.3 Transmittance and surface morphology
3.2.4 Discussions
3.3 Substrate temperature influence
3.3.1 Crystal structure
3.3.2 Optical properties
3.3.3 Surface morphology
3.3.4 Valence band structure
3.4 Growth time influence
3.5 Annealing effects
3.5.1 Annealing effect on films deposited at RT
3.5.2 Annealing effect on films deposited at 500 oC
3.5.3 Annealing effect on CL spectra
3.6 Conclusions
4 Effect of Si doping on properties of Ga2O3 films
4.1 Introductions
4.2 Si content influence
4.3 Substrate temperature influence
4.4 Oxygen pressure influence
4.5 Conclusions
5 Growth and characterization of (Ga1-xInx)2O3 films
5.1 Introduction
5.2 Bandgap engineering of (Ga1-xInx)2O3 films
5.2.1 Growth parameters
5.2.2 Optical properties
5.2.3 Structure and surface morphologies
5.3 Thermal annealing impact on crystal quality of (GaIn)2O3 alloys
5.4 Toward the understanding of annealing effects on (GaIn)2O3 films
5.4.1 Influence of annealing gas ambient
5.4.2 Influence of annealing temperature
5.5 Annealing effect on films with different indium content
5.6 Conclusions
6 Growth and characterization of (AlGa)2O3 films
6.1 Introduction
6.2 The Al content in the film
6.3 Structure of the (AlGa)2O3 films
6.4 Transmittance and bandgap of the (AlGa)2O3 films
6.5 Conclusions
1.1 Background
1.2 Review of studies on Ga2O3, (Ga1-xInx)2O3 and (AlxGa1-x)2O3 films
1.2.1 Ga2O3
1.2.2 Si doped Ga2O3
1.2.3 (Ga1-xInx)2O3
1.2.4 (AlxGa1-x)2O3
1.3 Purpose and Outline
2 Film growth and characterization methods
2.1 Film deposition techniques
2.2 Pulsed laser deposition
2.2.1 Basic of pulsed laser deposition
2.2.2 The deposition process
2.2.3 The pulsed laser deposition equipment used in this research
2.2.4 The film growth procedures
2.3 Characterization methods
3 Growth and characterization of Ga2O3 films
3.1 Introduction
3.2 Oxygen pressure influence
3.2.1 Growth rate
3.2.2 Crystal structure
3.2.3 Transmittance and surface morphology
3.2.4 Discussions
3.3 Substrate temperature influence
3.3.1 Crystal structure
3.3.2 Optical properties
3.3.3 Surface morphology
3.3.4 Valence band structure
3.4 Growth time influence
3.5 Annealing effects
3.5.1 Annealing effect on films deposited at RT
3.5.2 Annealing effect on films deposited at 500 oC
3.5.3 Annealing effect on CL spectra
3.6 Conclusions
4 Effect of Si doping on properties of Ga2O3 films
4.1 Introductions
4.2 Si content influence
4.3 Substrate temperature influence
4.4 Oxygen pressure influence
4.5 Conclusions
5 Growth and characterization of (Ga1-xInx)2O3 films
5.1 Introduction
5.2 Bandgap engineering of (Ga1-xInx)2O3 films
5.2.1 Growth parameters
5.2.2 Optical properties
5.2.3 Structure and surface morphologies
5.3 Thermal annealing impact on crystal quality of (GaIn)2O3 alloys
5.4 Toward the understanding of annealing effects on (GaIn)2O3 films
5.4.1 Influence of annealing gas ambient
5.4.2 Influence of annealing temperature
5.5 Annealing effect on films with different indium content
5.6 Conclusions
6 Growth and characterization of (AlGa)2O3 films
6.1 Introduction
6.2 The Al content in the film
6.3 Structure of the (AlGa)2O3 films
6.4 Transmittance and bandgap of the (AlGa)2O3 films
6.5 Conclusions
展开全部
基于氧化镓的超宽禁带半导体薄膜生长与表征 作者简介
张法碧，男，教授，硕士生导师。广西高校引进海外高层次人才“百人计划”，“广西高校千名骨干教师培训计划”人选，广西“创新创业青年人才培养示范”，“广西E层次人才”；研究领域：微电子与固体电子学。研究方向：紫外探测材料器件、宽禁带半导体材料与器件、二维材料与器件、透明氧化物薄膜与器件、功率器件。主持国家级项目一项，其他项目十余项。在Applied physics letters, Thin solid film, Journal of alloy and compounds等国际著名期刊已发表论文50余篇。成果获得了美国空军研究实验室、美国华盛顿大学、意大利卡利亚里大学等机构的一致好评与引用。曾经获得过国家多媒体课件大赛理工组二等奖，广西教育技术应用大赛特等奖，广西教学成果二等奖。
